Study of High Aspect Ratio NLD Plasma Etching and Postprocessing of Fused Silica and Borosilicate

被引:17
作者
Ahamed, Mohammed J. [1 ]
Senkal, Doruk [1 ]
Trusov, Alexander A. [1 ]
Shkel, Andrei M. [1 ]
机构
[1] Univ Calif Irvine, MicroSyst Lab, Irvine, CA 92697 USA
基金
美国国家科学基金会;
关键词
Microfabrication; plasma etching; fused quartz; fused silica; glass etching; roughness reduction; GLASS; PYREX;
D O I
10.1109/JMEMS.2015.2442596
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we report magnetic neutral loop discharge (NLD) plasma etching of fused silica (FS) and borosilicate glass (BSG), demonstrating high aspect ratio deep etch (100 mu m) with vertical walls (<3 degrees deviation from vertical). This paper for the first time presents the systematic study of FS and BSG deep etching in NLD plasma. Four different masking materials have been explored including metal, amorphous silicon, bonded silicon, and photoresist. Etch parameters were optimized to eliminate unwanted artifacts, such as micro-masking, trenching, and faceting, while retaining a high aspect ratio (up to 7: 1 for FS and 8: 1 for BSG). In addition, a method for sidewall roughness mitigation based on postfabrication annealing was developed, showing the sidewall roughness reduction from the average roughness (R-a) 900 to 85 nm. Further advances in deep plasma etching processes may enable the use of FS and BSG in the fabrication of precision inertial MEMS, micro-fluidic, and micro-optical devices.
引用
收藏
页码:790 / 800
页数:11
相关论文
共 28 条
[1]  
Ahamed M.J., 2014, Proceedings of the International Symposium on Inertial Sensors and Systems (ISISS), Laguna Beach, CA, USA, P1
[2]  
Ahamed MJ, 2013, P IEEE SENS C BALT M, P1
[3]   Deep reactive ion etching of borosilicate glass using an anodically bonded silicon wafer as an etching mask [J].
Akashi, T. ;
Yoshimura, Y. .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2006, 16 (05) :1051-1056
[4]   Profile control of a borosilicate-glass groove formed by deep reactive ion etching [J].
Akashi, Teruhisa ;
Yoshimura, Yasuhiro .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2008, 18 (10)
[5]  
Cao ZL, 2013, PROC IEEE MICR ELECT, P361, DOI 10.1109/MEMSYS.2013.6474253
[6]   Rectangular channels for lab-on-a-chip applications [J].
Ceriotti, L ;
Weible, K ;
de Rooij, NF ;
Verpoorte, E .
MICROELECTRONIC ENGINEERING, 2003, 67-8 :865-871
[7]   An investigation into the characteristics of deep reactive ion etching of quartz using SU-8 as a mask [J].
Chen, H. ;
Fu, C. .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2008, 18 (10)
[8]   Application of magnetic neutral loop discharge plasma in deep silica etching [J].
Chen, W ;
Sugita, K ;
Morikawa, Y ;
Yasunami, S ;
Hayashi, T ;
Uchida, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (06) :2936-2940
[9]  
Franssila S., 2010, Introduction to Microfabrication
[10]   High speed anisotropic etching of Pyrex® for microsystems applications [J].
Goyal, Abhijat ;
Hood, Vincent ;
Tadigadapa, Srinivas .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (6-7) :657-663