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Increased photocatalytic activity caused by B doping into BiVO4
被引:10
|作者:
Sudrajat, Hanggara
[1
,2
]
Hartuti, Sri
[3
]
机构:
[1] Ton Duc Thang Univ, Inst Computat Sci, Div Computat Phys, Ho Chi Minh City 700000, Vietnam
[2] Ton Duc Thang Univ, Fac Sci Appl, Ho Chi Minh City 700000, Vietnam
[3] Gifu Univ, Grad Sch Engn, Dept Environm & Renewable Energy Syst, Yanagido 1-1, Gifu 5011193, Japan
关键词:
Electron population;
Boron doping;
Bismuth vanadate;
Photocatalysis;
PHOTOGENERATED CHARGE-CARRIERS;
VISIBLE-LIGHT;
DEGRADATION;
WATER;
BEHAVIOR;
CRYSTALLINE;
PERFORMANCE;
GC(3)N(4);
OXIDATION;
POWDER;
D O I:
10.1007/s11164-018-03725-9
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
We have prepared B-doped BiVO4 (B-BiVO4) with oval-shaped morphology through a simple, one-step hydrothermal route employing sodium citrate as the chelating agent and H3BO3 as the dopant source. We then evaluated the photocatalytic activity of B-BiVO4 through the mineralization of phenoxyacetic acid. Our results demonstrate that the photocatalytic activity of BiVO4 increased appreciably following the B doping. We assign the increased photocatalytic activity to be due tothe increased electron population, as is evidenced by the increased infrared absorption induced by ultraviolet-visible light. We furthermore propose the increased electron population to be caused by additional electronic transitions from the partially occupied mid-gap states created by the guest B dopants to the conduction band of the host BiVO4.
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页码:2179 / 2195
页数:17
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