Increased photocatalytic activity caused by B doping into BiVO4

被引:10
|
作者
Sudrajat, Hanggara [1 ,2 ]
Hartuti, Sri [3 ]
机构
[1] Ton Duc Thang Univ, Inst Computat Sci, Div Computat Phys, Ho Chi Minh City 700000, Vietnam
[2] Ton Duc Thang Univ, Fac Sci Appl, Ho Chi Minh City 700000, Vietnam
[3] Gifu Univ, Grad Sch Engn, Dept Environm & Renewable Energy Syst, Yanagido 1-1, Gifu 5011193, Japan
关键词
Electron population; Boron doping; Bismuth vanadate; Photocatalysis; PHOTOGENERATED CHARGE-CARRIERS; VISIBLE-LIGHT; DEGRADATION; WATER; BEHAVIOR; CRYSTALLINE; PERFORMANCE; GC(3)N(4); OXIDATION; POWDER;
D O I
10.1007/s11164-018-03725-9
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have prepared B-doped BiVO4 (B-BiVO4) with oval-shaped morphology through a simple, one-step hydrothermal route employing sodium citrate as the chelating agent and H3BO3 as the dopant source. We then evaluated the photocatalytic activity of B-BiVO4 through the mineralization of phenoxyacetic acid. Our results demonstrate that the photocatalytic activity of BiVO4 increased appreciably following the B doping. We assign the increased photocatalytic activity to be due tothe increased electron population, as is evidenced by the increased infrared absorption induced by ultraviolet-visible light. We furthermore propose the increased electron population to be caused by additional electronic transitions from the partially occupied mid-gap states created by the guest B dopants to the conduction band of the host BiVO4.
引用
收藏
页码:2179 / 2195
页数:17
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