Thermal annealing effect on zinc nitride thin films deposited by reactive rf-magnetron sputtering process

被引：13

作者：

Wen, Ting ^{[1
]}

Gautam, Madhav ^{[1
]}

Soleimanpour, Amir M. ^{[1
]}

Jayatissa, Ahalapitiya H. ^{[1
]}

机构：

[1] Univ Toledo, Mech Ind & Mfg Engn Dept, MEMS & Nanotechnol Lab, Toledo, OH 43606 USA

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 02期

基金：

美国国家科学基金会;

关键词：

Zinc nitride; Thermal annealing; Crystal growth; Electronic transport; Optical properties; Photoconductivity; OPTICAL-PROPERTIES; ELECTRICAL CHARACTERIZATION; ZNO; OXIDATION;

D O I：

10.1016/j.mssp.2012.10.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc nitride films were deposited by reactive radio-frequency magnetron sputtering using a zinc target in a nitrogen and argon plasma. The deposited films were annealed in either air or O-2 at 300 degrees C to investigate the annealing effect on the microstructure, optical properties, and electronic characteristics of zinc nitride films. It was found that the annealing process decreased the crystallinity of zinc nitride films. It was also found that the optical band gap decreased from 1.33 eV to 1.14 eV after annealing. The analysis of film composition suggested that the concentration of oxygen increased slightly after annealing. Although the conduction type of both as-deposited and annealed films were n-type, the annealed films exhibited a higher resistivity, lower carrier concentration and lower mobility than the as-deposited films. Also, it was found that the as-deposited films did not exhibit any photoconducting behavior whereas the annealed films exhibited a pronounced photoconducting behavior. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：318 / 325

页数：8

共 26 条

[1] Properties of n-type ZnN thin films as channel for transparent thin film transistors [J].

Aperathitis, E. ;

Kambilafka, V. ;

Modreanu, M. .

THIN SOLID FILMS, 2009, 518 (04) :1036-1039

[2]

Ebru S.T., 2007, CHINESE PHYS LETT, V24, P3477

[3] Influence of post-annealing treatment on the structure properties of ZnO films [J].

Fang, ZB ;

Yan, ZJ ;

Tan, YS ;

Liu, XQ ;

Wang, YY .

APPLIED SURFACE SCIENCE, 2005, 241 (3-4) :303-308

[4] Optical properties of zinc oxynitride thin films [J].

Futsuhara, M ;

Yoshioka, K ;

Takai, O .

THIN SOLID FILMS, 1998, 317 (1-2) :322-325

[5] On the zinc nitride properties and the unintentional incorporation of oxygen [J].

Garcia Nunez, C. ;

Pau, J. L. ;

Hernandez, M. J. ;

Cervera, M. ;

Ruiz, E. ;

Piqueras, J. .

THIN SOLID FILMS, 2012, 520 (06) :1924-1929

[6] Gas sensing properties of graphene synthesized by chemical vapor deposition [J].

Gautam, Madhav ;

Jayatissa, Ahalapitiya H. .

MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 2011, 31 (07) :1405-1411

[7] Formation and control of zinc nitride in a molten LiCl-KCI-Li3N system [J].

Goto, T ;

Toyoura, K ;

Tsujimura, H ;

Ito, Y .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2004, 380 (1-2) :41-45

[8] Optical properties of zinc nitride films deposited by the rf magnetron sputtering method [J].

Jayatissa, Ahalapitiya H. ;

Wen, Ting ;

Gautam, Madhav .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (04)

[9]

Jiang N, 2011, MAT RES SOC S P, V1324

[10] Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films [J].

Jiang, Nanke ;

Georgiev, Daniel G. ;

Wen, Ting ;

Jayatissa, Ahalapitiya H. .

THIN SOLID FILMS, 2012, 520 (06) :1698-1704

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