Effects of growth conditions on the quality of B-doped graphene films

被引：5
|
作者：
You, Y. [1 ,2 ]
Wang, C. [2 ,5 ]
Xu, Y. L. [2 ,3 ]
Wan, J. X. [2 ,4 ]
Ren, W. [1 ]
Fang, X. H. [2 ,5 ]
Chen, X. Y. [2 ,4 ]
机构：
[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[2] Chinese Acad Sci, Shanghai Adv Res Inst, Thin Film Optoelect Technol Ctr, Shanghai 201210, Peoples R China
[3] Shanghai Univ, Dept Mat Sci & Engn, Shanghai 200444, Peoples R China
[4] Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[5] 99 Haike Rd,Zhangjiang Hitech Pk, Shanghai 201210, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 02期
关键词：
CHEMICAL-VAPOR-DEPOSITION; ELECTRONIC-PROPERTIES; MONOLAYER GRAPHENE; SOLAR-CELLS; BORON; NITROGEN;
D O I：
10.1063/1.4974010
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Boron-doped graphene (B-doped graphene) films with large area, high quality, and good uniformity are successfully prepared by chemical vapor deposition using ethylboronic acid (C2H7BO2) as the sole precursor. The pre-treatment of the copper foil and post-annealing are introduced to the growth process and proved to be greatly influential to the quality of B-doped graphene. The films prepared are mainly monolayer with the transmittance of about 97.1%, the B/C ratio of about 2.3%, the sheet resistance of 1.5-3 k Omega/square, and the carrier density of 1.13 x 10(13) cm(-2) at room temperature. Published by AIP Publishing.
引用
收藏
页数：6
相关论文
共 50 条
  • [21] The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations
    Shan, Dan
    Cao, Yunqing
    Yang, Ruihong
    Wang, Hongyu
    Tao, Tao
    JOURNAL OF NANOMATERIALS, 2020, 2020
  • [22] Catalytic CO oxidation on B-doped and BN co-doped penta-graphene: a computational study
    Krishnan, Ranganathan
    Wu, Shiuan-Yau
    Chen, Hsin-Tsung
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20 (41) : 26414 - 26421
  • [23] Catalyst-free solvothermal synthesis of ultrapure elemental N- and B-doped graphene for energy storage application
    Bhushan, Rebti
    Kumar, Prashant
    Thakur, A. K.
    SOLID STATE IONICS, 2020, 353
  • [24] The study of the effects of cooling conditions on high quality graphene growth by the APCVD method
    Xiao, Ke
    Wu, Huaqiang
    Lv, Hongming
    Wu, Xiaoming
    Qian, He
    NANOSCALE, 2013, 5 (12) : 5524 - 5529
  • [25] Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films
    Muranaka, Takahiro
    Kobashi, Koji
    Okabe, Hirotaka
    Tachibana, Takeshi
    Yokota, Yoshihiro
    Hayashi, Kazushi
    Kawakami, Nobuyuki
    Akimitsu, Jun
    DIAMOND AND RELATED MATERIALS, 2011, 20 (09) : 1273 - 1281
  • [26] Growth and properties of large-area sulfur-doped graphene films
    Zhou, Jinhao
    Wang, Zegao
    Chen, Yuanfu
    Liu, Jingbo
    Zheng, Binjie
    Zhan, Wanli
    Li, Yanrong
    JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (31) : 7944 - 7949
  • [27] Bimetallic oxide coupled with B-doped graphene as highly efficient electrocatalyst for oxygen evolution reaction
    Jiang, Yuanyuan
    Dong, Kai
    Lu, Yizhong
    Liu, Jiawei
    Chen, Bo
    Song, Zhongqian
    Niu, Li
    SCIENCE CHINA-MATERIALS, 2020, 63 (07) : 1247 - 1256
  • [28] Hierarchical B-doped carbon nanotube with enhanced electrochemical lithium storage
    Xia, Tianyu
    Zhu, Youqi
    MICROPOROUS AND MESOPOROUS MATERIALS, 2019, 284 : 276 - 282
  • [29] Study of the role of Fe based catalysts on the growth of B-doped SWCNTs synthesized by CVD
    Daothong, S.
    Parjanne, J.
    Kauppinen, E. I.
    Valkeapaa, M.
    Pichler, T.
    Singjai, P.
    Ayala, P.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (11-12): : 2518 - 2522
  • [30] Study on structural and electrical properties of B-doped SiCx silicon quantum dots thin films
    Yang W.
    Zhao F.
    Zhang Z.
    Du K.
    Ge W.
    Yang P.
    Taiyangneng Xuebao/Acta Energiae Solaris Sinica, 2021, 42 (10): : 76 - 79
12345