Effects of growth conditions on the quality of B-doped graphene films

被引：5
|
作者：
You, Y. [1 ,2 ]
Wang, C. [2 ,5 ]
Xu, Y. L. [2 ,3 ]
Wan, J. X. [2 ,4 ]
Ren, W. [1 ]
Fang, X. H. [2 ,5 ]
Chen, X. Y. [2 ,4 ]
机构：
[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[2] Chinese Acad Sci, Shanghai Adv Res Inst, Thin Film Optoelect Technol Ctr, Shanghai 201210, Peoples R China
[3] Shanghai Univ, Dept Mat Sci & Engn, Shanghai 200444, Peoples R China
[4] Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[5] 99 Haike Rd,Zhangjiang Hitech Pk, Shanghai 201210, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 02期
关键词：
CHEMICAL-VAPOR-DEPOSITION; ELECTRONIC-PROPERTIES; MONOLAYER GRAPHENE; SOLAR-CELLS; BORON; NITROGEN;
D O I：
10.1063/1.4974010
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Boron-doped graphene (B-doped graphene) films with large area, high quality, and good uniformity are successfully prepared by chemical vapor deposition using ethylboronic acid (C2H7BO2) as the sole precursor. The pre-treatment of the copper foil and post-annealing are introduced to the growth process and proved to be greatly influential to the quality of B-doped graphene. The films prepared are mainly monolayer with the transmittance of about 97.1%, the B/C ratio of about 2.3%, the sheet resistance of 1.5-3 k Omega/square, and the carrier density of 1.13 x 10(13) cm(-2) at room temperature. Published by AIP Publishing.
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页数：6
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