Effect of a buffer layer on the properties of UV photodetectors based on a ZnO/diamond film structure

被引：15

作者：

Huang, Jian ^{[1
]}

Wang, Linjun ^{[1
]}

Xu, Run ^{[1
]}

Shi, Weimin ^{[1
]}

Xia, Yiben ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0268-1242/23/12/125018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, ZnO films were grown on the nucleation sides of freestanding diamond substrates with and without a ZnO homobuffer layer by the radio-frequency (RF) magnetron sputtering method. The effects of buffer layers on the properties of the ZnO film and UV photodetectors based on a ZnO/freestanding diamond film structure were studied. The experimental results suggested that the buffer layer was helpful in improving the crystalline quality of ZnO/diamond heteroepitaxial films and the electrical property of the ZnO photodetectors was relative to the crystalline quality of ZnO films. For the photodetector based on the ZnO film with a buffer layer, a higher value of photo-responsivity under

引用

页数：5

共 19 条

[1] Deposition of high-quality zinc oxide thin films on diamond substrates for high-frequency surface acoustic wave filter applications [J].

Chen, JJ ;

Zeng, F ;

Li, DM ;

Niu, JB ;

Pan, F .

THIN SOLID FILMS, 2005, 485 (1-2) :257-261

[2] Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].

Cho, SL ;

Ma, J ;

Kim, YK ;

Sun, Y ;

Wong, GKL ;

Ketterson, JB .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763

[3] Crystallization behavior and origin of c-axis orientation in sol-gel-derived ZnO:Li thin films on glass substrates [J].

Fujihara, S ;

Sasaki, C ;

Kimura, T .

APPLIED SURFACE SCIENCE, 2001, 180 (3-4) :341-350

[4] Freestanding CVD diamond elaborated by pulsed-microwave-plasma for ZnO/diamond SAW devices [J].

Lamara, T ;

Belmahi, M ;

Elmazria, O ;

Le Brizoual, L ;

Bougdira, J ;

Rémy, M ;

Alnot, P .

[5] Sol-gel derived (Li, Mg):: ZnO films with high c-axis orientation and electrical resistivity [J].

Liu, J ;

Weng, WJ ;

Ding, WH ;

Cheng, K ;

Du, PY ;

Shen, G ;

Han, GR .

SURFACE & COATINGS TECHNOLOGY, 2005, 198 (1-3) :274-277

[6] Electrical characteristics of UV photodetectors based on ZnO/diamond film structure [J].

Liu, Jianmin ;

Xia, Yiben ;

Wang, Linjun ;

Su, Qingfeng ;

Shi, Weimin .

APPLIED SURFACE SCIENCE, 2007, 253 (12) :5218-5222

[7] Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers [J].

Noda, H ;

Hokazono, A ;

Kawarada, H .

[8] ZnO devices:: Photodiodes and p-type field-effect transistors -: art. no. 153504 [J].

Ryu, YR ;

Lee, TS ;

Lubguban, JA ;

White, HW ;

Park, YS ;

Youn, CJ .

APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3

[9] Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition [J].

Ryu, YR ;

Zhu, S ;

Budai, JD ;

Chandrasekhar, HR ;

Miceli, PF ;

White, HW .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) :201-204

[10] Photoelectrical characteristics of diamond UV detectors: Dependence on device design and film quality [J].

Salvatori, S ;

Pace, E ;

Rossi, MC ;

Galluzzi, F .

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