High nonlinear figure-of-merit amorphous silicon waveguides

被引：44
作者：
Matres, J. [1 ]
Ballesteros, G. C. [1 ]
Gautier, P. [2 ]
Fedeli, J-M [2 ]
Marti, J. [1 ]
Oton, C. J. [1 ]
机构：
[1] Univ Politecn Valencia, Nanophoton Technol Ctr, Valencia 46022, Spain
[2] CEA LETI, F-38054 Grenoble, France
来源：
OPTICS EXPRESS | 2013年 / 21卷 / 04期
关键词：
SEMICONDUCTOR; ABSORPTION; SIGNAL; GAIN;
D O I：
10.1364/OE.21.003932
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient gamma is measured by four-wave-mixing and the imaginary part of gamma is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient gamma and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples. (C) 2012 Optical Society of America
引用
收藏
页码：3932 / 3940
页数：9
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