Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

被引：3
|
作者：
Chang, KM
Yeh, TH
Wang, SW
Li, CH
Yang, JY
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30039,TAIWAN
[2] NANO DEVICE LAB,HSINCHU,TAIWAN
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1996年 / 45卷 / 01期
关键词：
chlorine-based plasmas; electron cyclotron resonance; polysilicon etching;
D O I：
10.1016/0254-0584(96)80042-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl-2/HBr/O-2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.
引用
收藏
页码：22 / 26
页数：5
相关论文
共 50 条
  • [31] Controlling of microloading effect of polysilicon etching in high density ECR etcher
    Yang, M
    Jackson, R
    Lassiter, T
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESSING, 1996, 96 (12): : 61 - 69
  • [32] Etching Kinetics and Surface Conditions for KNbxOy Thin Films with Fluorine- and Chlorine-Based Plasma Chemistries
    Nomin Lim
    Alexander Efremov
    Hyun-Gyu Hwang
    Sahn Nahm
    Kwang-Ho Kwon
    Plasma Chemistry and Plasma Processing, 2020, 40 : 625 - 640
  • [33] APPLICATION OF A HIGH-DENSITY INDUCTIVELY-COUPLED PLASMA REACTOR TO POLYSILICON ETCHING
    PATRICK, R
    SCHOENBORN, P
    TODA, H
    BOSE, F
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 1296 - 1300
  • [34] High-rate etching of single oriented AlN films by chlorine-based inductive coupled plasma for vibrational energy harvesters
    Nguyen, H. H.
    Minh, L. Van
    Kuwano, H.
    18TH INTERNATIONAL CONFERENCE ON MICRO AND NANOTECHNOLOGY FOR POWER GENERATION AND ENERGY CONVERSION APPLICATIONS, 2019, 1407
  • [35] Tungsten silicide/polysilicon stack etching using mixed fluorine-chlorine chemistry in a high density plasma chamber
    Zaleski, M
    Simpson, L
    Guerry, A
    PLASMA PROCESSING XII, 1998, 98 (04): : 203 - 209
  • [36] Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN
    Hahn, YB
    Hays, DC
    Donovan, SM
    Abernathy, CR
    Han, J
    Shul, RJ
    Cho, H
    Jung, KB
    Pearton, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (03): : 768 - 773
  • [37] RESIDUE FORMATION AND ELIMINATION IN CHLORINE-BASED PLASMA-ETCHING OF AL-SI-CU INTERCONNECTIONS
    SUZUKI, T
    KITAGAWA, H
    YAMADA, K
    NAGOSHI, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 596 - 600
  • [38] Deep anisotropic etching of GaAs with chlorine-based chemistries and SU-8 mask using RIE and high density ICP etching methods
    Chiang, YMJ
    Lau, J
    Bachman, M
    Li, GP
    Kim, HK
    Ra, YJ
    Ketola, K
    BIOMEMS AND BIONANOTECHNOLOGY, 2002, 729 : 77 - 82
  • [39] Etching Kinetics and Surface Conditions for KNbxOy Thin Films with Fluorine- and Chlorine-Based Plasma Chemistries
    Lim, Nomin
    Efremov, Alexander
    Hwang, Hyun-Gyu
    Nahm, Sahn
    Kwon, Kwang-Ho
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 2020, 40 (02) : 625 - 640
  • [40] PLASMA-ASSISTED PROCESSING - THE ETCHING OF POLYSILICON IN A DIATOMIC CHLORINE DISCHARGE
    SAWIN, HH
    RICHARDS, AD
    THOMPSON, BE
    ACS SYMPOSIUM SERIES, 1985, 290 : 164 - 177
12345