Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

被引:65
作者
Poli, Stefano [1 ,2 ]
Pala, Marco G. [3 ]
Poiroux, Thierry [2 ]
Deleonibus, Simon [2 ]
Baccarani, Giorgio [1 ]
机构
[1] Univ Bologna, Adv Res Ctr Elect Syst, I-40122 Bologna, Italy
[2] CEA LETI MINATEC, F-38054 Grenoble, France
[3] UMR CNRS INPG UJF 5130, MINATEC, IMEP LAHC, F-38016 Grenoble, France
关键词
Effective mobility; nonequilibrium Green's functions (NEGFs); quasi-ballistic transport; silicon nanowire (Si-NW); surface roughness (SR);
D O I
10.1109/TED.2008.2005164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Lateral size effects on surface-roughness-limited mobility in silicon-nanowire FETs are analyzed by means of a full-quantum 3-D self-consistent simulation. A statistical analysis Is carried out by considering different realizations of the potential roughness at the Si-SiO2 interfaces. Nanowires with lateral section varying from 3 x 3 to 7 x 7 nm(2) are considered. Effective mobility is computed by evaluating the electron density in a reduced channel region to eliminate parasitic effects from contacts. It is found that transport in wires with the smallest section is dominated by scattering due to potential fluctuations, resulting in a larger standard deviation of the effective mobility, whereas it is dominated by transverse-mode coupling in wires with larger section, resulting in a stronger influence of surface roughness at high gate voltages.
引用
收藏
页码:2968 / 2976
页数:9
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