Formation of CdSe/CdTe quantum dots in Multilayer Thin films using PVD Method

被引：0

作者：

Kumar, M. Melvin David ^{[1
]}

Devadason, Suganthi ^{[1
]}

Rajesh, S. ^{[1
]}

机构：

[1] Karunya Univ, Thin Film Lab, Dept Phys, Coimbatore 641114, Tamil Nadu, India

来源：

INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY | 2012年 / 1451卷

关键词：

Multilayer thin films; Quantum Confinement; CdSe; ZnSe; SiOx; CORE/SHELL NANOCRYSTALS; CDSE; CONFINEMENT; MATRIX; HETEROSTRUCTURES; SPECTROSCOPY; EXCITONS; GLASS;

D O I：

10.1063/1.4732406

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nanocrystals of CdSe have been produced in CdTe hetrostructure layer by thermal evaporation method. Structural studies were done by X-ray diffractometer. Quantum confinement effect of CdSe/CdTe nanocrystals was analysed from optical studies. Bulk CdSe has a bandgap energy of 1.756eV that can be shifted to larger values by reducing the crystal size to dimensions smaller than the Bohr radius of the exciton. Experimentally measured band gap shifts with respect to the bulk value for quantum dot thin films are compared with the predictions of the effective mass approximation model (i.e., Brus model) and Quantum mechanical model. Size of the crystallites calculated from both the models was found to agree with each other.

引用

页码：176 / 178

页数：3

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