3D WL MEMS WITH TSV LAST TECHNOLOGY'S MECHANICAL ANALYSIS

被引：0

作者：

Lee, Hsiao-Yen ^{[1
]}

Kuo, Chin-Chung ^{[1
]}

Wang, Chung-Ting ^{[1
]}

Lee, Ying-Chih ^{[1
]}

Chen, Ming-Hung ^{[1
]}

Tarng, Hsin-Lu ^{[1
]}

Hung, Chih-Pin ^{[1
]}

机构：

[1] Adv Semicond Engn Inc, Kaohsiung, Taiwan

来源：

2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2017年

关键词：

Through-silicon via; Micromechanical device; Stress; Three-dimensional display; Finite element analysis;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The through-silicon-via (TSV) technology is one of the most effective approaches to fulfill the form factor, profile, performance, and 3D interconnect demand of next generation handheld and wearable electronics. This paper introduces two structures of TSV LAST technology, standard flow and short flow. The standard flow TSV LAST structure shows better warpage control performance. The short flow TSV LAST structure can shorten manufacture procedures up to 20% and reduce the cost. This paper reports two warpage control solutions: (1) low modulus and low CTE passivation material, and (2) a balance layer design that the warpage issue can be improved more than 30% and 20%, respectively.

引用

收藏

页码：1380 / 1383

页数：4

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