Shot noise in the edge states of 2D topological insulators

被引：0

作者：

Nagaev, Kirill ^{[1
]}

Aseev, Pavel ^{[2
]}

机构：

[1] Kotelnikov Inst Radioengn & Elect, Moscow 125009, Russia

[2] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland

来源：

2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2017年

基金：

俄罗斯基础研究基金会;

关键词：

Shot noise; topological insulators; edge states; CONDUCTORS; TRANSPORT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We calculate the resistance and shot noise in the edge states of a 2D topological insulator that result from the exchange of electrons between these states and conducting puddles in the bulk of the insulator. The two limiting cases where the energy relaxation is either absent or very strong are considered. A finite time of spin relaxation in the puddles is introduced phenomenologically. Depending on this time and on the strength of coupling between the edge states and the puddles, the ratio of the shot noise to the Possonian one ranges from 0 to 1/3, which is in an agreement with the available experimental data.

引用

页数：4

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