Threading dislocations and optical properties of GaN and GaInN

被引：0
作者：
Miyajima, T
Hino, T
Tomiya, S
Yanashima, K
Nakajima, H
Araki, T
Nanishi, Y
Satake, A
Masumoto, Y
Akimoto, K
Kobayashi, T
Ikeda, M
机构：
[1] Sony Corp, Core Technol & Network Co, Atsugi, Kanagawa 2430014, Japan
[2] Sony Shiroishi Semicond Inc, Shiroishi, Miyagi 9890734, Japan
[3] Sony Corp, Environm & Anal Tech Dept, Kanagawa 2400036, Japan
[4] Ritsumeikan Univ, Dept Photon, Shiga 5258577, Japan
[5] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
[6] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2001年 / 228卷 / 02期
关键词：
D O I：
10.1002/1521-3951(200111)228:2<395::AID-PSSB395>3.0.CO;2-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We categorized threading dislocations in GaN and GaInN multiple quantum wells and epitaxially lateral overgrown GaN into three types of line defects (edge. screw and mixed dislocations), and investigated the optical properties. It was confirmed by cathodoluminescence measurements that not only screw and mixed dislocations but also edge dislocations act as non-radiative centers in GaN. Epitaxial lateral overgrowth (ELO) technique can reduce the densities of all line-defects in a several mum wide wing region. Growth steps in the wing region were disturbed by the defects which were left in a seed region, and a complicated structure was formed at the surface of GaN and GaInN layers grown on ELO-GaN at low temperature. We believe that this surface structure formed by high supersaturation is a cause of In compositional spatial fluctuation and phase separation of GaInN alloy.
引用
收藏
页码：395 / 402
页数：8
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