Nitride-based LEDs with n--GaN current spreading layers

被引：23

作者：

Su, YK ^{[1
]}

Chang, SJ

Wei, SC

Chuang, RW

Chen, SM

Li, WL

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Epitech Technol Corp, Tainan 74145, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 12期

关键词：

current spreading; electrostatic discharge (ESD); GaN; light-emitting diode (LED);

D O I：

10.1109/LED.2005.859647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based light-emitting diodes (LEDs) with n(-)-GaN current spreading layers were proposed and fabricated. With a 0.1-mu m-thick n(-)-GaN current spreading layer, it was found that the output power could be enhanced by 35% without increasing the operation voltage of the LEDs at 20 mA. In addition, implementing the n(-)-GaN current spreading layer also significantly improved the electrostatic discharge characteristics of nitride-based LEDs.

引用

页码：891 / 893

页数：3

共 15 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[2] Complementary and alternative therapies in childhood attention and hyperactivity problems [J].

Chan, E ;

Rappaport, LA ;

Kemper, KJ .

JOURNAL OF DEVELOPMENTAL AND BEHAVIORAL PEDIATRICS, 2003, 24 (01) :4-8

[3] Nitride-based flip-chip ITO LEDs [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Lee, CT ;

Chen, WS ;

Shen, CF ;

Hsu, YP ;

Shei, SC ;

Lo, HM .

IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2005, 28 (02) :273-277

[4] Nitride-based LEDs with p-InGaN capping layer [J].

Chang, SJ ;

Chen, CH ;

Chang, PC ;

Su, YK ;

Chen, PC ;

Jhou, YD ;

Hung, H ;

Wang, SM ;

Huang, BR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2567-2570

[5] Highly reliable nitride-based LEDs with SPS plus ITO upper contacts [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Chuang, RW ;

Lin, YC ;

Shei, SC ;

Lo, HM ;

Lin, HY ;

Ke, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) :1439-1443

[6] InGaN-GaN multiquantum-well blue and green light-emitting diodes [J].

Chang, SJ ;

Lai, WC ;

Su, YK ;

Chen, JF ;

Liu, CH ;

Liaw, UH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :278-283

[7] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes [J].

Chang, SJ ;

Kuo, CH ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Wen, TC ;

Lai, WC ;

Chen, JF ;

Tsai, JM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :744-748

[8] Current crowding in GaN/InGaN light emitting diodes on insulating substrates [J].

Guo, X ;

Schubert, EF .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4191-4195

[9] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[10] Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs [J].

Kim, H ;

Park, SJ ;

Hwang, H ;

Park, NM .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1326-1328

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