Ab initio investigation of the nitrofluoride SiNF

被引:8
作者
Betranhandy, E [1 ]
Matar, SF [1 ]
机构
[1] Univ Bordeaux 1, CNRS, Inst Chim Mat Condensee Bordeaux, F-33608 Pessac, France
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 20期
关键词
D O I
10.1103/PhysRevB.72.205108
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new chemical system SiNF is proposed as a candidate for potential applications based on calculations within the density functional theory in its local density approximation. Different structural setups were built based on a geomimetism principle. All proposed structures were fully geometry optimized using ultrasoft pseudopotentials. From the cohesive energies used as a selection criterion TiOCl-derived and stishovite-based silicon nitrofluoride are evidenced as most stable varieties. The electronic band structure and chemical bonding properties show insulating behavior with a wide band direct gap and stress the different chemical roles played by nitrogen and fluorine. Theoretical K-edge XANES spectra for Si, N, and F are provided as a signature tool of analysis for potential syntheses.
引用
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页数:7
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