InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

被引：362

作者：

Ustinov, VM

Maleev, NA

Zhukov, AE

Kovsh, AR

Egorov, AY

Lunev, AV

Volovik, BV

Krestnikov, IL

Musikhin, YG

Bert, NA

Kop'ev, PS

Alferov, ZI

Ledentsov, NN

Bimberg, D

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 19期

关键词：

D O I：

10.1063/1.124023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs self-organized quantum dots inserted in InGaAs quantum well have been grown on GaAs substrates by molecular beam epitaxy. The lateral size of the InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases. The quantum dot emission wavelength can be controllably changed from 1.1 to 1.3 mu m by varying the composition of the InGaAs quantum well matrix. Photoluminescence at 1.33 mu m from vertical optical microcavities containing the InAs/InGaAs quantum dot array was demonstrated. (C) 1999 American Institute of Physics. [S0003-6951(99)02119-1].

引用

页码：2815 / 2817

页数：3

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