Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate

被引：3

作者：

Zhu, Youhua ^{[1
]}

Watanabe, Arata ^{[1
]}

Lu, Lin ^{[1
]}

Chen, Zhitao ^{[1
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 01期

关键词：

HIGH-PERFORMANCE; BLUE; MOCVD; LAYER; LEDS;

D O I：

10.1143/JJAP.51.01AG02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN-based light emitting diodes (LEDs) with a total thickness of 4.8 mu m have been grown by metal-organic chemical vapor deposition on 4-in. Si(111) substrate. The structural property has been revealed by the measurements of high-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy. It can be clarified that the LEDs in sample have the good interfaces and layer periodicities for the strained-layer superlattices and multiple quantum wells. In addition, the optical property in the light output power has been evaluated. As a result, LEDs with a maximum output power of 3.3 mW and a high saturation operating current of 400 mA have exhibited the good device performance. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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