Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation

被引：31

作者：

Okuda, Takafumi ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 12期

基金：

日本学术振兴会;

关键词：

BORON; GAN;

D O I：

10.7567/APEX.6.121301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier lifetimes in a highly Al-doped p-type epilayer (N-A = 1 x 10(18) cm(-3)) are investigated by differential microwave photoconductance decay (mu-PCD) measurements. A carrier lifetime of 310 ns in the as-grown p-type epilayer decreases to 90 ns by thermal treatment in Ar, O-2, or N-2 atmospheres (>700 degrees C), and recovers to 300 ns by H-2 annealing (>750 degrees C). Hydrogen is detected at a concentration of (2-3) x 10(15) cm(-3) in the H-2-annealed epilayer. These results suggest that a lifetime killer exists in the p-type epilayer, limiting the carrier lifetime to 90 ns and is passivated by hydrogen annealing, resulting in the improved carrier lifetime of 300 ns. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

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