Modeling of photoconductive terahertz photomixers

被引：0

作者：

Saeedkia, D ^{[1
]}

Safavi-Naeini, S ^{[1
]}

Mansour, RR ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IRMMW-THZ2005: THE JOINT 30TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 13TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For a dc biased photoconductor film excited by two CW laser beams, the continuity equations for the electron and hole densities are solved in their general form along with the appropriate boundary conditions to find photocurrent distribution inside the photoconductor. ne dependency of the photocurrent on the applied bias, parameters of the lasers, and beat frequency is explored for typical photomixers made of low-temperature grown GaAs (LTG-GaAs) photoconductor.

引用

页码：136 / 137

页数：2

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