Growth and structural properties of gallium oxide nanowires prepared by chemical vapour deposition

被引：5

作者：

Kim, HW ^{[1
]}

Kim, NH ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

ADVANCES IN APPLIED CERAMICS | 2006年 / 105卷 / 02期

关键词：

gallium oxide; chemical vapour deposition; nanowires; structural properties;

D O I：

10.1179/174367606X95772

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium oxide nanowires have been prepared on Si( 100) substrates using metallo-organic chemical vapour deposition. Growth behaviour has been investigated with various deposition times and the structural morphologies of the nanowires have been studied. The thickness and surface coverage ratio of the deposits increased with increasing deposition time. The gallium oxide nanowires were amorphous phase, having a circular cross-section with diameter of about 50-250 nm.

引用

页码：84 / 87

页数：4

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