Broken metal fingers in silicon wafer solar cells and PV modules
被引:66
作者:
Chaturvedi, Pooja
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机构:
Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117548, SingaporeNatl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117548, Singapore
Chaturvedi, Pooja
[1
]
Hoex, Bram
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Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117548, SingaporeNatl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117548, Singapore
Hoex, Bram
[1
]
Walsh, Timothy M.
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机构:
Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117548, SingaporeNatl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117548, Singapore
Walsh, Timothy M.
[1
]
机构:
[1] Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117548, Singapore
Silicon wafer solar cells;
Broken metal fingers;
Electroluminescence;
Mechanical load test;
PV modules;
Thermal cycling test;
PHOTOVOLTAIC MODULES;
D O I:
10.1016/j.solmat.2012.09.013
中图分类号:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号:
0807 ;
0820 ;
摘要:
Photovoltaic (PV) modules undergo accelerated aging tests as part of the certification procedure in order to confirm that they are not susceptible to the most common failure mechanisms that would strongly reduce their lifetime in the field. Though not yet part of the standard test sequence, it is well known that silicon camera based electroluminescence (EL) imaging would be a good addition to the test sequence as it enables the identification of defects in PV modules such as micro-cracks and poor electrical contact that will limit the lifetime of the module in the field, but do not necessarily result in a power reduction of more than 5% that would have them fail the certification tests. After IEC tests, we observe two distinct types of dark areas in the EL images of silicon wafer based PV modules, irregularly shaped regions which are the result of cracks in the silicon wafers, and regular rectangular shaped areas which we postulate are due to broken front grid fingers. In order to identify the mechanism responsible for the dark rectangular regions in the EL images of silicon wafer based PV modules, we investigate a soldered solar cell which exhibits similar rectangular dark areas in its EL image. SEM microscopy reveals that the dark areas in this cell are due to broken fingers caused by contraction of the tin during the soldering process. We hypothesise that a similar mechanism is responsible for the dark rectangular areas seen in the EL images of silicon wafer based PV modules after the accelerated aging tests. (C) 2012 Elsevier B.V. All rights reserved.
机构:
Xi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
Yang, Hong
He, Wenshuang
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机构:
Xi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
He, Wenshuang
Wang, He
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机构:
Xi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
Wang, He
Huang, Jingsheng
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机构:
China Elect Power Res Inst, Nanjing 210003, Jiangsu, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
Huang, Jingsheng
Zhang, Junjun
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机构:
China Elect Power Res Inst, Nanjing 210003, Jiangsu, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
机构:
Xi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
Yang, Hong
He, Wenshuang
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机构:
Xi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
He, Wenshuang
Wang, He
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h-index: 0
机构:
Xi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
Wang, He
Huang, Jingsheng
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h-index: 0
机构:
China Elect Power Res Inst, Nanjing 210003, Jiangsu, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China
Huang, Jingsheng
Zhang, Junjun
论文数: 0引用数: 0
h-index: 0
机构:
China Elect Power Res Inst, Nanjing 210003, Jiangsu, Peoples R ChinaXi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Sch Sci, Xian 710049, Shaanxi, Peoples R China