Band-gap expansion in the surface-localized electronic structure of MoS2(0002)

被引：45

作者：

Han, Sang Wook ^{[1
,2
]}

Cha, Gi-Beom ^{[3
]}

Frantzeskakis, Emmanouil ^{[4
]}

Razado-Colambo, Ivy ^{[4
]}

Avila, Jose ^{[4
]}

Park, Young S. ^{[5
]}

Kim, Daehyun ^{[6
]}

Hwang, Jihoon ^{[6
]}

Kang, Jeong Soo ^{[6
]}

Ryu, Sunmin ^{[7
]}

Yun, Won Seok ^{[1
,2
]}

Hong, Soon Cheol ^{[1
,2
]}

Asensio, Maria C. ^{[4
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South Korea

[3] Dongnae Sch, Pusan 609719, South Korea

[4] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

[5] Pohang Univ Sci & Technol, Dept Chem, Ctr Superfunct Mat, Pohang 790784, South Korea

[6] Catholic Univ Korea, Dept Phys, Puchon 420743, South Korea

[7] Kyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

MOS2; SPECTROSCOPY;

D O I：

10.1103/PhysRevB.86.115105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic band structure of MoS2 single crystals has been investigated using angle-resolved photoelectron spectroscopy and first-principles calculations. The orbital symmetry and k dispersion of these electronic states responsible for the direct and the indirect electronic band gaps have been unambiguously determined. By experimentally probing an increase of the electronic band gap, we conclude that a MoS2 (0002) surface localized state exists just below the valence band maximum at the Gamma point. This electronic state originates from the sulfur planes within the topmost layer. Our comprehensive study addresses the surface electronic structure of MoS2 and the role of van der Waals interlayer interactions.

引用

页数：5

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