Novel design considerations for high efficiency carbon nanotube field emitters

被引:0
作者
Choi, Wonbong [1 ]
Lahiri, Indranil
机构
[1] Florida Int Univ, Dept Mech & Mat Engn, Nanomat & Devices Lab, Miami, FL 33199 USA
来源
2012 25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2012年
关键词
Carbon nanotubes; field emission; 3 dimensional design; interface control; current density; EMISSION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-current field emitters with high operational stability are in demand for a number of applications, including electronic and important military use. In the present research, such a field emitter is designed through application of interface engineering and three-dimensional (3-D) design in a carbon nanotube (CNT) based field emitter. Field emission characterization of the emitter shows low turn-on field, low threshold field, very high emission current density, along with good emission stability and excellent resistance to structural damage. Interface engineering plays an important by offering lower CNT-substrate interfacial resistance and strong interfacial bonding between substrate and CNTs. On the other hand, 3-D design increases CNTs emitters and provides protection against structural damage. Both these features promote high emission current density. Novel design, excellent properties and a simple, scalable three-step processing route make this CNT-based emitter a viable option for high current-density field emission devices.
引用
收藏
页码:30 / +
页数:2
相关论文
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