Structural and optical properties of sulfurized Cu2ZnSnS4 thin films from Cu-Zn-Sn alloy precursors

被引：24

作者：

Amal, M. Ikhlasul ^{[1
]}

Kim, Kyoo Ho ^{[1
]}

机构：

[1] Yeungnam Univ, Dept Mat Sci & Engn, Gyongsan 712749, Gyeongbuk, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 02期

关键词：

SOLAR-CELLS; CONSTANTS; THICKNESS; GROWTH;

D O I：

10.1007/s10854-012-0858-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study reports the preparation of Cu2ZnSnS4 (CZTS) thin films by magnetron sputtering deposition with a Cu-Zn-Sn ternary alloy target and sequential sulfurization. The effects of substrate temperatures on the structural, morphological, compositional as well as optical and electrical properties were characterized. The results showed the CZTS thin films prepared by sulfurization at substrate temperature of 570 A degrees C yielded secondary phases along with CZTS compound. The relatively good properties of CZTS thin film were obtained after sulfurization at substrate temperature of 550 A degrees C. This CZTS film showed compact structure with large grain size of 900 nm, direct optical band gap of 1.47 eV, optical absorption coefficient over 10(4) cm(-1), resistivity of 4.05 Omega cm, carrier concentration of 8.22 x 10(18) cm(-3), and mobility of 43.38 cm(2) V-1 S-1.

引用

页码：559 / 566

页数：8

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