The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC.

被引：0

作者：

Lebedev, AA ^{[1
]}

Strelchuk, AM ^{[1
]}

Ortolland, S ^{[1
]}

Raynaud, C ^{[1
]}

Locatelli, ML ^{[1
]}

Planson, D ^{[1
]}

Chante, JP ^{[1
]}

机构：

[1] INST NATL SCI APPL,CEGELY,F-69621 VILLEURBANNE,FRANCE

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper negative temperature coefficient of the 6H-SiC diode breakdown voltage is considered. It is shown that the temperature dependence of the breakdown voltage value can be explained in terms of recharging of deep centers in the space charge region of the diode. Experiments made with boron doped 6H-SiC diodes are in good agreement with calculation.

引用

页码：701 / 704

页数：4

共 7 条

[1]

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[2]

DMITRIEV AP, 1983, FIZ TEKH POLUPROV, V17, P1093

[3]

KONSTANTINOV AO, 1981, PISMA ZH TEKH FIZ, V7, P1335

[4]

KUREGIAN AS, 1989, FIZ TEKH POLUPROV, V23, P1164

[5]

LEBEDEV AA, 1995, SEMICONDUCTORS+, V29, P850

[6] OBSERVATION OF THE D-CENTER IN 6H-SIC P-N DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION [J].

MAZZOLA, MS ;

SADDOW, SE ;

NEUDECK, PG ;

LAKDAWALA, VK ;

WE, S .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2730-2732

[7]

VODAKOV YA, 1981, PISMA ZH TEKH FIZ, V7, P705

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