The Effect of Substrate on Vibrational Properties of Single-Layer MoS2

被引:2
|
作者
Golasa, K. [1 ]
Molas, M. R. [2 ]
Nogajewski, K. [2 ]
Grzeszczyk, M. [1 ]
Zinkiewicz, M. [1 ]
Potemski, M. [2 ]
Babinski, A. [1 ]
机构
[1] Univ Warsaw, Fac Phys, L Pasteura 5, PL-02093 Warsaw, Poland
[2] CNRS UGA UPS INSA EMFL, Lab Natl Champs Magnet Intenses, 25 Rue Martyrs, F-38042 Grenoble, France
关键词
METAL; RAMAN;
D O I
10.12693/APhysPolA.130.1172
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the Raman scattering from single-layer molybdenum disulfide (MoS2) deposited on various substrates: Si/SiO2, hexagonal boron nitride (h-BN), sapphire, as well as suspended. Room temperature Raman scattering spectra are investigated under both resonant (632.8 nm) and non-resonant (514.5 nm) excitations. A rather weak influence of the substrate on the Raman scattering signal is observed. The most pronounced, although still small, is the effect of h-BN, which manifests itself in the change of energy positions of the E' and A(1)' Raman modes of single-layer MoS2. We interpret this modification as originating from van der Waals interaction between the MoS2 and h-BN layers.
引用
收藏
页码:1172 / 1175
页数:4
相关论文
共 50 条
  • [1] The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
    Buscema, Michele
    Steele, Gary A.
    van der Zant, Herre S. J.
    Castellanos-Gomez, Andres
    NANO RESEARCH, 2014, 7 (04) : 561 - 571
  • [2] The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
    Michele Buscema
    Gary A. Steele
    Herre S. J. van der Zant
    Andres Castellanos-Gomez
    Nano Research, 2014, 7 : 561 - 571
  • [3] SINGLE-LAYER MOS2
    JOENSEN, P
    FRINDT, RF
    MORRISON, SR
    MATERIALS RESEARCH BULLETIN, 1986, 21 (04) : 457 - 461
  • [4] Electronic and optical properties of single-layer MoS2
    Dong, Hai-Ming
    Guo, San-Dong
    Duan, Yi-Feng
    Huang, Fei
    Xu, Wen
    Zhang, Jin
    FRONTIERS OF PHYSICS, 2018, 13 (04)
  • [5] Electronic and optical properties of single-layer MoS2
    Hai-Ming Dong
    San-Dong Guo
    Yi-Feng Duan
    Fei Huang
    Wen Xu
    Jin Zhang
    Frontiers of Physics, 2018, 13
  • [6] Single-Layer MoS2 Phototransistors
    Yin, Zongyou
    Li, Hai
    Li, Hong
    Jiang, Lin
    Shi, Yumeng
    Sun, Yinghui
    Lu, Gang
    Zhang, Qing
    Chen, Xiaodong
    Zhang, Hua
    ACS NANO, 2012, 6 (01) : 74 - 80
  • [7] Single-layer MoS2 transistors
    Radisavljevic, B.
    Radenovic, A.
    Brivio, J.
    Giacometti, V.
    Kis, A.
    NATURE NANOTECHNOLOGY, 2011, 6 (03) : 147 - 150
  • [8] Single-Layer MoS2 Electronics
    Lembke, Dominik
    Bertolazzi, Simone
    Kis, Andras
    ACCOUNTS OF CHEMICAL RESEARCH, 2015, 48 (01) : 100 - 110
  • [9] Single-layer MoS2 transistors
    Radisavljevic B.
    Radenovic A.
    Brivio J.
    Giacometti V.
    Kis A.
    Nature Nanotechnology, 2011, 6 (3) : 147 - 150
  • [10] The Strain Rate Effect on the Buckling of Single-Layer MoS2
    Jin-Wu Jiang
    Scientific Reports, 5