We report on the Raman scattering from single-layer molybdenum disulfide (MoS2) deposited on various substrates: Si/SiO2, hexagonal boron nitride (h-BN), sapphire, as well as suspended. Room temperature Raman scattering spectra are investigated under both resonant (632.8 nm) and non-resonant (514.5 nm) excitations. A rather weak influence of the substrate on the Raman scattering signal is observed. The most pronounced, although still small, is the effect of h-BN, which manifests itself in the change of energy positions of the E' and A(1)' Raman modes of single-layer MoS2. We interpret this modification as originating from van der Waals interaction between the MoS2 and h-BN layers.
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China Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R ChinaChina Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R China
Dong, Hai-Ming
Guo, San-Dong
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China Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R ChinaChina Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R China
Guo, San-Dong
Duan, Yi-Feng
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China Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R ChinaChina Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R China
Duan, Yi-Feng
Huang, Fei
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China Univ Min & Technol, Low Carbon Energy Inst, Xuzhou 221116, Jiangsu, Peoples R ChinaChina Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R China
Huang, Fei
Xu, Wen
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Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
Yunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R ChinaChina Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R China
Xu, Wen
Zhang, Jin
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Yunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R ChinaChina Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R China
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Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)
Radisavljevic B.
Radenovic A.
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Institute of Biotechnology, Ecole Polytechnique Federale de Lausanne (EPFL)Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)
Radenovic A.
Brivio J.
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Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)
Brivio J.
Giacometti V.
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Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)
Giacometti V.
Kis A.
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Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL)