Effect of substrate temperature on structural, morphological, optical and electrical properties of IGZO thin films

被引：18
|
作者：
Kumar Jayaraman, Vinoth [1 ]
Maldonado Alvarez, Arturo [1 ]
Olvera Amador, Maria de la Luz [1 ]
机构：
[1] Inst Politecn Nacl CINVESTAV IPN, Ctr Invest & Estudios Avanzados, Dept Ingn Elect SEES, Apartado Postal 14740, Mexico City 07000, DF, Mexico
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2017年 / 86卷
关键词：
Gallium; Indium; Co-doping; Spray pyrolysis; IGZO; ZnO; AL-DOPED ZNO; SPRAY-PYROLYSIS; DEPOSITION; THICKNESS; GROWTH;
D O I：
10.1016/j.physe.2016.10.029
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Indium and gallium co-doped zinc oxide (IGZO) thin films were deposited on glass substrates by ultrasonic spray pyrolysis. Physical properties such as structural, morphological, optical and electrical properties were examined on IGZO thin films with respect to the changes in the substrate temperature (425, 450 and 475 degrees C). Structural results showed that IGZO films were crystalline and presented hexagonal wurtzite structure. Morphological studies proved that the substrate temperature changed the sizes of hexagonal nanostructures of IGZO. Optical transmittance in the UV-vis region and electrical measurements confirmed that IGZO films were transparent ( > 70%) with a minimum electrical resistivity similar to 10.5x10(-3) Omega cm.
引用
收藏
页码：164 / 167
页数：4
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