A new MagFET-based integrated current sensor highly immune to EMI

被引：18

作者：

Aiello, Orazio ^{[1
]}

Fiori, Franco ^{[1
]}

机构：

[1] Politecn Torino, Eln Dpt, Microelect EMC Grp, I-10128 Turin, Italy

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 04期

关键词：

MAGNETIC-FIELD; DESIGN; MODEL;

D O I：

10.1016/j.microrel.2012.10.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper deals with the susceptibility to radio frequency interference of the integrated circuits used to monitor the current of power devices. A circuit based on the mirroring principle of common use in commercial devices is first considered, then a new contact-less fully integrated current sensor based on the Hall effect is proposed. The design of this current sensor is shown in detail and its susceptibility to radio frequency interference is investigated through time-domain simulations. The results of these analyses are presented then compared with those obtained from similar analysis carried out on a conventional (wired) current sensor. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：573 / 581

页数：9

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