Band insulator to Mott insulator transition in 1T-TaS2

被引:139
作者
Wang, Y. D. [1 ]
Yao, W. L. [1 ]
Xin, Z. M. [1 ]
Han, T. T. [1 ]
Wang, Z. G. [1 ]
Chen, L. [1 ]
Cai, C. [1 ]
Li, Yuan [1 ,2 ]
Zhang, Y. [1 ,2 ]
机构
[1] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE-DENSITY WAVES; PHASE-TRANSITIONS;
D O I
10.1038/s41467-020-18040-4
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
1T-TaS2 undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics that support a quantum spin liquid state. Here, we determine the electronic and structural properties of 1T-TaS2 using angle-resolved photoemission spectroscopy and X-Ray diffraction. At low temperatures, the 2/2c-periodic band dispersion, along with half-integer-indexed diffraction peaks along the c axis, unambiguously indicates that the ground state of 1T-TaS2 is a band insulator with interlayer dimerization. Upon heating, however, the system undergoes a transition into a Mott insulating state, which only exists in a narrow temperature window. Our results refute the idea of searching for quantum magnetism in 1T-TaS2 only at low temperatures, and highlight the competition between on-site Coulomb repulsion and interlayer hopping as a crucial aspect for understanding the material's electronic properties. 1T-TaS2 possesses complex electronic phase behaviors in transition-metal di-chalcogenides, undergoing several charge-ordered phases before finally into an insulating state of unknown origin. Here, the authors determine its electronic and structural properties experimentally, revealing its origin.
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页数:7
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共 35 条
  • [1] Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
    Butler, C. J.
    Yoshida, M.
    Hanaguri, T.
    Iwasa, Y.
    [J]. NATURE COMMUNICATIONS, 2020, 11 (01)
  • [2] Mott phase at the surface of 1T-TaSe2 observed by scanning tunneling microscopy -: art. no. 036405
    Colonna, S
    Ronci, F
    Cricenti, A
    Perfetti, L
    Berger, H
    Grioni, M
    [J]. PHYSICAL REVIEW LETTERS, 2005, 94 (03)
  • [3] ELECTRICAL, STRUCTURAL AND MAGNETIC-PROPERTIES OF PURE AND DOPED 1T-TAS2
    FAZEKAS, P
    TOSATTI, E
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03): : 229 - 244
  • [4] Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]
  • [5] From Mott insulator to band insulator: A dynamical mean-field theory study
    Fuhrmann, Andreas
    Heilmann, David
    Monien, Hartmut
    [J]. PHYSICAL REVIEW B, 2006, 73 (24)
  • [6] Van der Waals heterostructures
    Geim, A. K.
    Grigorieva, I. V.
    [J]. NATURE, 2013, 499 (7459) : 419 - 425
  • [7] Spinon Fermi Surface in a Cluster Mott Insulator Model on a Triangular Lattice and Possible Application to 1T-TaS2
    He, Wen-Yu
    Xu, Xiao Yan
    Chen, Gang
    Law, K. T.
    Lee, Patrick A.
    [J]. PHYSICAL REVIEW LETTERS, 2018, 121 (04)
  • [9] Band insulator to Mott insulator transition in a bilayer Hubbard model
    Kancharla, S. S.
    Okamoto, S.
    [J]. PHYSICAL REVIEW B, 2007, 75 (19)
  • [10] OBSERVATION OF MOTT LOCALIZATION GAP USING LOW-TEMPERATURE SCANNING TUNNELING SPECTROSCOPY IN COMMENSURATE 1T-TAS2
    KIM, JJ
    YAMAGUCHI, W
    HASEGAWA, T
    KITAZAWA, K
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (15) : 2103 - 2106