Optical and optoelectronic properties of Ce3+ doped Mg3Y2(Ge,Si)3O12 inverse garnet

被引：10

作者：

Shimizu, Takayuki ^{[1
]}

Ueda, Jumpei ^{[1
]}

Tanabe, Setsuhisa ^{[1
]}

机构：

[1] Kyoto Univ, Grad Sch Human & Environm Studies, Sakyo Ku, Kyoto 6068501, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12 | 2012年 / 9卷 / 12期

关键词：

garnet; Ce3+; photoconductivity; white-LED;

D O I：

10.1002/pssc.201200789

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical and optoelectronic properties of Ce3+ doped Mg3Y2Ge3-xSixO12 (Ce:MYGSG) (x=0, 0.5, 1.0, 1.5) inverse garnet phosphors were investigated. Since inverse garnets have various Ce3+ sites with different crystal field strength, the Ce:MYGSG shows inhomogeneous broadening in PL spectra. Quantum efficiency is at most 20%, which is much lower than that of Ce3+ doped Y3Al5O12 (Ce:YAG). Temperature dependence of PL intensity revealed that thermal relaxation via the cross point of the 5d(1) and 4f levels is one of the quenching process in the Ce:MYGSG. By the photoconductivity measurements, thermal ionization and photoionization occur more easily in the Ge4+ rich sample. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2296 / 2299

页数：4

共 4 条

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