Analysis and Design of a Stacked Power Amplifier With Very High Bandwidth

被引：62

作者：

Fritsche, David ^{[1
]}

Wolf, Robert ^{[1
]}

Ellinger, Frank ^{[1
]}

机构：

[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, D-01062 Dresden, Germany

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 10期

关键词：

HBT; high voltage/high power (HiVP); long-term evolution (LTE); SiGe BiCMOS; stacked power amplifier (PA); voltage doubler;

D O I：

10.1109/TMTT.2012.2209439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to simplify and optimize the design process of stacked amplifiers, this paper presents a novel analytical method to dimension the input network for ideal output behavior. To verify this new structural design process, a fully integrated stacked power amplifier (PA) in 0.25-mu m SiGe BiCMOS technology is proposed. The stacked architecture enables broadband matching networks, therefore the designed PA reaches a very high bandwidth of 800 MHz around 2 GHz. At 2 GHz, the small-signal gain is 23.8 dB. The output power in the 1-dB compression point and the saturated output power are 26.2 and 27.3 dBm, leading to a power-added efficiency (PAE) of 34% and 40%, respectively. Using a long-term evolution (LTE) modulated input signal without any predistortion, the amplifier reaches an average output power of 21 dBm and a PAE of 12%, fulfilling the LTE specifications in terms of adjacent channel leakage ratio and error vector magnitude.

引用

页码：3223 / 3231

页数：9

共 17 条

[1]

[Anonymous], P IEEE MTT S INT MIC

[2]

[Anonymous], P EUR MICR INT CIRC

[3]

[Anonymous], P AS PAC MICR C DEC

[4]

Ezzeddine A., 1985, 1985 IEEE - MTT-S International Microwave Symposium Digest (Cat. No.85CH2163-4), P336

[5]

Ezzeddine A.K., 2011, PROC IEEE MTT S INT, P1, DOI DOI 10.1109/MWSYM.2011.5973295

[6] The high voltage/high power FET (HiVP1) [J].

Ezzeddine, AK ;

Huang, HC .

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, :215-218

[7]

Fathi M, 2010, IEEE CUST INTEGR CIR

[8] A 20 dBm linear RF power amplifier using stacked silicon-on-sapphire MOSFETs [J].

Jeong, Jinho ;

Pornpromlikit, Sataporn ;

Asbeck, Peter M. ;

Kelly, Dylan .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (12) :684-686

[9] Design and analysis of stacked power amplifier in series-input and series-output configuration [J].

Lei, Ming-Fong ;

Tsai, Zuo-Min ;

Lin, Kun-You ;

Wang, Huei .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (12) :2802-2812

[10] A 31-dBm, High Ruggedness Power Amplifier in 65-nm Standard CMOS with High-Efficiency Stacked-Cascode Stages [J].

Leuschner, Stephan ;

Pinarello, Sandro ;

Hodel, Uwe ;

Mueller, Jan-Erik ;

Klar, Heinrich .

2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, :395-398

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