A compact model of the reverse gate-leakage current in GaN-based HEMTs

被引：5
|
作者：
Ma, Xiaoyu [1 ]
Huang, Junkai [1 ]
Fang, Jielin [1 ]
Deng, Wanling [1 ]
机构：
[1] Jinan Univ, Dept Elect Engn, Guangzhou 510630, Guangdong, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2016年 / 126卷
关键词：
High electron mobility transistors (HEMTs); Gate-leakage current; Leakage current modeling; THIN-FILM TRANSISTORS; CURRENT MECHANISMS; ALGAN/GAN; TEMPERATURE; TRAPS;
D O I：
10.1016/j.sse.2016.09.022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gate-leakage behavior in GaN-based high electron mobility transistors (HEMTs) is studied as a function of applied bias and temperature. A model to calculate this current is given, which shows that trap-assisted tunneling, trap-assisted Frenkel-Poole (FP) emission, and direct Fowler-Nordheim (FN) tunneling have their main contributions at different electric field regions. In addition, the proposed model clearly illustrates the effect of traps and their assistance to the gate leakage. We have demonstrated the validity of the model by comparisons between model simulation results and measured experimental data of HEMTs, and a good agreement is obtained. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：10 / 13
页数：4
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