Area selective grafting of siloxane molecules on low-k dielectric with respect to copper surface

被引：10

作者：

Rezvanov, A. ^{[1
,2
,3
]}

Gornev, E. S. ^{[3
]}

de Marneffe, J-F ^{[2
]}

Armini, S. ^{[2
]}

机构：

[1] Moscow Inst Phys & Technol, Inst Per 9, Dolgoprudnyi 141700, Russia

[2] Imes Vzw, Kapeldreef 75, B-3001 Leuven, Belgium

[3] Mol Elect Res Inst, 1-Y Zapadny Proezd 12-1, Moscow 124460, Russia

来源：

APPLIED SURFACE SCIENCE | 2019年 / 476卷 / 317-324期

关键词：

Selective deposition; Low-k; Copper; SAMs; XPS; DEPOSITION;

D O I：

10.1016/j.apsusc.2019.01.088

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The selective pore sealing of porous organosilica glass (OSG k = 2.4) dielectrics by self-assembled monolayers (SAM) is studied, using three precursors: (3-trimethoxysilylpropyl) diethylenetriamine (DETA), 3-aminopropyltrimethoxysilane (APTMS) and trimethylmethoxysilane (TMMS), combined with a citric-acid based metal surface cleaning. The sealing effectiveness of the SAM films derived from amino-containing precursors is demonstrated. The selectivity of the SAM grafting to the dielectric surface with respect to the copper surface is investigated. Post-SAM deposition cleaning in citric acid-based solution leads to desorption of the amino-containing precursors from the copper surface while the low-k surface remains partially covered and sealed. On copper, the SAM cleaning process occurs through interface copper oxide removal, by means of a lift-off mechanisms.

引用

页码：317 / 324

页数：8

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