Growth and high pressure studies of zirconium sulphoselenide single crystals

被引:8
作者
Patel, K. R. [1 ]
Vaidya, R. D. [1 ]
Dave, M. S. [2 ]
Patel, S. G. [3 ]
机构
[1] Ashok & Rita Patel Inst Integrated Study & Res Bi, New Vallabh Vidyanagar 388121, India
[2] NV Patel Coll Pure & Appl Sci, Vallabh Vidyanagar 388120, Gujarat, India
[3] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India
来源
PRAMANA-JOURNAL OF PHYSICS | 2009年 / 73卷 / 05期
关键词
Single crystals; chemical vapour transport (CVT) technique; high pressure; Bridgman anvil; electrical properties; ZRSE3;
D O I
10.1007/s12043-009-0161-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Transition metal trichalcogenides are well suited for extreme pressure lubrication. These materials being semiconducting and of layered structure may undergo structural and electronic transition under pressure. In this paper authors reported the details about synthesis and characterization of zirconium sulphoselenide single crystals. The chemical vapour transport technique was used for the growth of zirconium sulphoselenide single crystals. The energy dispersive analysis by X-ray (EDAX) gave the confirmation about the stoichiometry of the as-grown crystals and other structural characterizations were accomplished by X-ray diffraction (XRD) study. The variation of electrical resistance was monitored in a Bridgman opposed anvil set-up up to 8 GPa pressure to identify the occurrence of any structural transition. These crystals do not possess any structural transitions upto the pressure limit examined.
引用
收藏
页码:945 / 953
页数:9
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