Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE

被引：6
作者：
Wang, HM
Zeng, YP
Fan, TW
Zhou, HW
Pan, D
Dong, JR
Kong, MY
机构：
[1] Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 179卷 / 3-4期
关键词：
D O I：
10.1016/S0022-0248(97)00219-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InAs thin films with good characteristics were grown on GaAs (0 0 1) substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy indicated that most of the threading dislocations formed by the interaction of misfit dislocations are annihilated above a small thickness. The high electron mobility and small temperature dependence of InAs epilayers are useful for magnetic sensors which is demonstrated by the properties of Hall effect devices.
引用
收藏
页码：658 / 660
页数：3
相关论文
共 7 条
  • [1] THE GROWTH OF HIGHLY MISMATCHED INXGA1-XAS (0.28-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) ON GAAS BY MOLECULAR-BEAM EPITAXY
    CHANG, SZ
    CHANG, TC
    LEE, SC
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) : 4916 - 4926
  • [2] RHEED AND X-RAY CHARACTERIZATION OF INGAAS/GAAS GROWN BY MBE
    FUJITA, S
    NAKAOKA, Y
    UEMURA, T
    TABUCHI, M
    NODA, S
    TAKEDA, Y
    SASAKI, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 224 - 227
  • [3] HIGH-SENSITIVITY HALL ELEMENTS MADE FROM SI-DOPED INAS ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    IWABUCHI, T
    ITO, T
    YAMAMOTO, M
    SAKO, K
    KANAYAMA, Y
    NAGASE, K
    YOSHIDA, T
    ICHIMORI, F
    SHIBASAKI, I
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1302 - 1306
  • [4] ELECTRICAL-PROPERTIES OF INAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES
    KALEM, S
    CHYI, J
    LITTON, CW
    MORKOC, H
    KAN, SC
    YARIV, A
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (07) : 562 - 564
  • [5] Popovic R., 1991, Hall Effect Devices: Magnetic Sensors and Characterization of Semiconductors
  • [6] ELECTRICAL AND MAGNETOOPTICAL STUDIES OF MBE INAS ON GAAS
    WANG, PD
    HOLMES, SN
    LE, T
    STRADLING, RA
    FERGUSON, IT
    DEOLIVEIRA, AG
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (06) : 767 - 786
  • [7] TRANSPORT-COEFFICIENTS OF INAS EPILAYERS
    WIEDER, HH
    [J]. APPLIED PHYSICS LETTERS, 1974, 25 (04) : 206 - 208
1