Barrier height imaging of Si(111)3 x I-Ag reconstructed surfaces

被引：2

作者：

Furuhashi, Takahisa ^{[1
]}

Oshima, Yoshifumi ^{[1
]}

Hirayama, Hiroyuki ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 02期

关键词：

scanning tunneling microscopy (STM); barrier height (BH); decay rate; surface local density of state (LDOS); Ag; Si(111);

D O I：

10.1016/j.apsusc.2005.12.146

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated the bias voltage polarity dependence of atomically resolved barrier height (BH) images on Si(1 1 1)3 x 1-Ag surfaces. The BH images were very similar to scanning tunneling microscopy (STM) images in both the empty and filled states. This similarity strongly supports the interpretation that the BH image reflects the vertical decay rate of the surface local density of states (LDOS). Differences in contrast and protrusion shapes between BH and STM images were observed. We attributed these differences to the geometric contribution to the STM image and to the improved spatial resolution of the BH image due to the lock-in technique. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：651 / 654

页数：4

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