Charge transport across organic-organic interfaces in organic light-emitting diodes

被引:4
作者
Houili, H.
Tutis, E.
Zuppiroli, L.
机构
[1] Ecole Polytech Fed Lausanne, Lab Optoelectron Mat Mol, STI IMX LOMM, CH-1015 Lausanne, Switzerland
[2] Inst Phys, HR-10000 Zagreb, Croatia
关键词
organic light-emitting diodes; dielectric interface; hopping transport; energetic disorder; organic semiconductors;
D O I
10.1016/j.synthmet.2006.09.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The process of hopping transport across organic heterojunctions is critical to the function of organic light-emitting diodes (OLED) and many other currently developed organic electronic devices. We consider the case of a hole-only or homopolar heterojunction with Gaussian energetic disorder. We cross-compare the results of our previous multiparticle Monte Carlo simulator to results of the pioneering analytic hopping model of Arkhipov et al. [VI. Arkhipov, EX Emelianova, H. Bassler, J. Appl. Phys. 90 (2001) 2352]. This comparison made it possible to point out and correct some shortcomings of the latter model. This includes the new definition of the injection level at the heterojunction, which brings orders of magnitude change to the current with respect to values obtained for previously used injection levels. Further insight, related to the backward-to-forward hopping ratio at the heterojunction, also brings about the order of magnitude correction for the current. We end up with a rather complete and cross-verified analytical description of the charge transport across energetically disordered homopolar heterojunctions. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1256 / 1261
页数:6
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