UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering

被引：625
作者：
Lim, Jae-Hong [1 ]
Kang, Chang-Ku [1 ]
Kim, Kyoung-Kook [1 ]
Park, Il-Kyu [1 ]
Hwang, Dae-Kue [1 ]
Park, Seong-Ju [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
来源：
ADVANCED MATERIALS | 2006年 / 18卷 / 20期
关键词：
D O I：
10.1002/adma.200502633
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A UV-Iight-emitting homojunction ZnO LED is grown by radiofrequency sputtering at high temperature, improving the structural, electrical, and optical properties of the n- and p-type ZnO layers. The figure shows a comparison of the electroluminescence spectra of A) a p-n homojunction ZnO LED and B) a ZnO LED with Mg0.1Zn0.9O layers used as energy barrier layers. Such materials are of interest for their potential use in long-lifetime solid-state lighting, high-density information storage, secure communication, and chemical/biological-agent monitoring.
引用
收藏
页码：2720 / +
页数：6
相关论文
共 28 条
  • [1] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes
    Alivov, YI
    Van Nostrand, JE
    Look, DC
    Chukichev, MV
    Ataev, BM
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (14) : 2943 - 2945
  • [2] Optically pumped lasing of ZnO at room temperature
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Koyama, S
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2230 - 2232
  • [3] Analysis of the visible and UV electroluminescence in homojunction GaN LED's
    Calle, F
    Monroy, E
    Sanchez, FJ
    Munoz, E
    Beaumont, B
    Haffouz, S
    Leroux, M
    Gibart, P
    [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1998, 3 (24): : art. no. - 24
  • [4] Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode
    Guo, XL
    Choi, JH
    Tabata, H
    Kawai, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A): : L177 - L180
  • [5] Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source
    Guo, XL
    Tabata, H
    Kawai, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 135 - 139
  • [6] p-type behavior in phosphorus-doped (Zn,Mg)O device structures
    Heo, YW
    Kwon, YW
    Li, Y
    Pearton, SJ
    Norton, DP
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (18) : 3474 - 3476
  • [7] p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101
    Hwang, DK
    Kang, SH
    Lim, JH
    Yang, EJ
    Oh, JY
    Yang, JH
    Park, SJ
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (22) : 1 - 3
  • [8] P-type electrical conduction in transparent thin films of CuAlO2
    Kawazoe, H
    Yasukawa, M
    Hyodo, H
    Kurita, M
    Yanagi, H
    Hosono, H
    [J]. NATURE, 1997, 389 (6654) : 939 - 942
  • [9] Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant
    Kim, KK
    Kim, HS
    Hwang, DK
    Lim, JH
    Park, SJ
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (01) : 63 - 65
  • [10] Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy
    Ko, HJ
    Chen, YF
    Hong, SK
    Wenisch, H
    Yao, T
    Look, DC
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3761 - 3763
123