Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells

被引：12

作者：

Abdulkadir, Auwal ^{[1
,2
]}

Aziz, Azlan Abdul ^{[1
]}

Pakhuruddin, Mohd Zamir ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, Minden 11800, Penang, Malaysia

[2] Umaru Musa Yaradua Univ, Dept Phys, PMB 2218, Katsina, Nigeria

来源：

RESULTS IN PHYSICS | 2020年 / 19卷

关键词：

ITO; Black silicon; Annealing; Heterojunction; Solar cell; THIN-FILMS; SPRAY-PYROLYSIS; ITO FILMS; ELECTRICAL-PROPERTIES; OPTIMIZATION; TRANSPARENT; TEMPERATURE; FABRICATION; SN;

D O I：

10.1016/j.rinp.2020.103405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) serves as an excellent anti -reflective coating (ARC) and transparent contact in optoelectronic devices including in crystalline silicon (c-Si) solar cells. To enhance broadband light absorption in the c-Si solar cells, black silicon (b-Si) surfaces can be used to reduce light reflection within 300-1100 nm wave-length region. In this work, properties of 300 nm-thick ITO on b-Si after post-deposition annealing with different temperatures (200-500 degrees C) are investigated for application in heterojunction solar cells. Annealing the ITO at 400 C produces the highest crystalline quality, moderate surface reflection and optimum electrical properties. For electrical characterization, ITO/b-Si/NiO and ITO/c-Si/NiO reference solar cells are illuminated with white light LED-based solar simulator at illumination of 47 mW/cm(2) and temperature of 25 degrees C. The ITO/b-Si/NiO solar cells demonstrate higher short-circuit current density (J(SC)) and open-circuit voltage (V) when compared to the reference solar cells.

引用

页数：7

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