Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells

Indium tin oxide (ITO) serves as an excellent anti -reflective coating (ARC) and transparent contact in optoelectronic devices including in crystalline silicon (c-Si) solar cells. To enhance broadband light absorption in the c-Si solar cells, black silicon (b-Si) surfaces can be used to reduce light reflection within 300-1100 nm wave-length region. In this work, properties of 300 nm-thick ITO on b-Si after post-deposition annealing with different temperatures (200-500 degrees C) are investigated for application in heterojunction solar cells. Annealing the ITO at 400 C produces the highest crystalline quality, moderate surface reflection and optimum electrical properties. For electrical characterization, ITO/b-Si/NiO and ITO/c-Si/NiO reference solar cells are illuminated with white light LED-based solar simulator at illumination of 47 mW/cm(2) and temperature of 25 degrees C. The ITO/b-Si/NiO solar cells demonstrate higher short-circuit current density (J(SC)) and open-circuit voltage (V) when compared to the reference solar cells.