ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

被引：15

作者：

Hamada, Masaya ^{[1
]}

Matsuura, Kentaro ^{[1
]}

Hamada, Takuya ^{[1
]}

Muneta, Iriya ^{[1
]}

Kakushima, Kuniyuki ^{[1
]}

Tsutsui, Kazuo ^{[1
]}

Wakabayashi, Hitoshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / SB期

关键词：

2D material; ZrS2; transition metal di-chalcogenide; sputtering; FET; FIELD-EFFECT TRANSISTOR; MOS2; FILM; LAYER; MOBILITY; STRAIN;

D O I：

10.35848/1347-4065/abd6d7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZrS2 amibipolar MISFETs are obtained in operations with both electrons and holes. A layered polycrystalline ZrS2 thin film was formed by sputtering and sulfur-vapor annealing on a whole surface of a 2.4 cm x 2.4 cm SiO2/Si substrate. The ZrS2 FETs have Al2O3 gate insulator and TiN film for both the top-gate electrode and Schottky-barrier contact, which show symmetrical I-d-V-gs curves with a V-off of 0.4 V contributed by the TiN film with midgap work function to the sputtered ZrS2 film. Notably, ambipolar FET operations because of both electrons and holes were successfully observed with an on/off current ratio of 250. This is an important step to realize n/p-type unipolar ZrS2 FETs. (c) 2021 The Japan Society of Applied Physics

引用

页数：5

共 47 条

[1] Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout [J].