Absence of dynamic fluctuation in metallic In chains on Si(111): Core-level and valence-band photoemission study

被引：22

作者：

Ahn, J. R.

Byun, J. H.

Kim, J. K.

Yeom, H. W. ^{[1
]}

机构：

[1] Yonsei Univ, Ctr Atom Wires & Layers, Seoul 120746, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120746, South Korea

[3] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, BK21 Phys Res Div, Suwon 440746, South Korea

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.75.033313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied in detail the evolution of the metal-insulator transition with temperature for the (4x1)-In chain structure on Si(111) using core-level and valence-band photoemission spectroscopy. Photoemission spectra unambiguously reveal that the high- and low-temperature phases are distinct with well-separated and characteristic spectral features. No sign of extra broadening or change of the spectral features was observed above the well-defined critical temperature. This result clearly rules out the existence of any dynamic fluctuation for the high-temperature metallic phase in contradiction with a recent theory [Phys. Rev. Lett. 96, 136101 (2006)].

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