Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors

被引:41
作者
Chen, Bo-Wei [1 ]
Chang, Ting-Chang [2 ,5 ]
Chang, Kuan-Chang [4 ]
Hung, Yu-Ju [1 ]
Huang, Shin-Pin [1 ]
Chen, Hua-Mao [6 ]
Liao, Po-Yung [2 ]
Lin, Yu-Ho [3 ]
Huang, Hui-Chun [4 ]
Chiang, Hsiao-Cheng [4 ]
Yang, Chung-I [7 ]
Zheng, Yu-Zhe [1 ]
Chu, Ann-Kuo [1 ]
Li, Hung-Wei [8 ]
Tsai, Chih-Hung [8 ]
Lu, Hsueh-Hsing [8 ]
Wang, Terry Tai-Jui [9 ]
Chang, Tsu-Chiang [9 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[3] Natl Sun Yat Sen Univ, Dept Chem, Kaohsiung 804, Taiwan
[4] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan
[5] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[6] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[7] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
[8] AU Optron Co Ltd, New Display Proc Res Div, Taoyuan 300, Taiwan
[9] Ind Technol Res Inst, 195 Sect 4,Chung Hsing Rd, Hsinchu 31040, Taiwan
关键词
foldable electronics; LTPS TFTs; long-term mechanical bending; polycrystalline silicon protrusion; surface engineering; AMORPHOUS-SILICON; DEGRADATION; CRYSTALLIZATION; INTERFACE; TFTS;
D O I
10.1021/acsami.6b14525
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing longterm mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.
引用
收藏
页码:11942 / 11949
页数:8
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