In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

被引：73

作者：

Singisetti, Uttam ^{[1
]}

Wistey, Mark A. ^{[1
,2
]}

Burek, Gregory J. ^{[1
]}

Baraskar, Ashish K. ^{[1
]}

Thibeault, Brian J. ^{[1
]}

Gossard, Arthur C. ^{[1
,2
]}

Rodwell, Mark J. W. ^{[1
]}

Shin, Byungha ^{[3
]}

Kim, Eun J. ^{[3
]}

McIntyre, Paul C. ^{[3
]}

Yu, Bo ^{[4
]}

Yuan, Yu ^{[4
]}

Wang, Dennis ^{[4
]}

Taur, Yuan ^{[4
]}

Asbeck, Peter ^{[4
]}

Lee, Yong-Ju ^{[5
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[4] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA

[5] Intel Corp, Santa Clara, CA 95054 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 11期

关键词：

InAs source/drain; InGaAs MOSFET; migration-enhanced epitaxial regrowth; source/drain regrowth; III-V MOSFET; GATE-LENGTH; MOBILITY; INGAAS; TRANSCONDUCTANCE;

D O I：

10.1109/LED.2009.2031304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report Al2O3/In0.53Ga0.47 As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n(+) regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In0.53Ga0.47 As channel with an In0.48Al0.52 As back confinement layer and the n(++) source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed I-D = 0.95 mA/mu m current density at V-GS = 4.0 V and g(m) = 0.45 mS/mu m peak transconductance at V-DS = 2.0 V.

引用

页码：1128 / 1130

页数：3

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