Room temperature p-n ZnO blue-violet light-emitting diodes

被引：175

作者：

Wei, Z. P.

Lu, Y. M.

Shen, D. Z.

Zhang, Z. Z.

Yao, B.

Li, B. H.

Zhang, J. Y.

Zhao, D. X.

Fan, X. W.

Tang, Z. K.

机构：

[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] Changchun Univ Sci & Technol, Changchun 130022, Peoples R China

[4] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2435699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO p-n junction light-emitting diodes (LEDs) were fabricated on c-plane Al2O3 substrates by plasma-assisted molecular beam epitaxy. Gas mixture of N-2 and O-2 was used as the p-type dopant, by which the double-donor doping of N-2(O) can be avoided significantly. The fabricated p-type ZnO layers have a higher hole density and carrier mobility. The LEDs showed a very good rectification characteristic with a low threshold voltage of 4.0 V even at a temperature above 300 K. The LEDs can even emit intensive electroluminescence in the blue-violet region at the temperature of 350 K. The blue-violet emission was attributed to the donor-acceptor pair recombination at the p-type layer of the LED. (c) 2007 American Institute of Physics.

引用

页数：3

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