Perpendicularly magnetized Cu2Sb type (Mn-Cr)AlGe films onto amorphous SiO2

被引：9

作者：

Kubota, Takahide ^{[1
,2
]}

Kota, Yohei ^{[3
]}

Ito, Keita ^{[1
,2
]}

Umetsu, Rie Y. ^{[1
,2
]}

Sun, Mingling ^{[1
]}

Mizuguchi, Masaki ^{[1
,2
,4
]}

Takanashi, Koki ^{[1
,2
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan

[3] Natl Inst Technol, Fukushima Coll, Iwaki, Fukushima 9708034, Japan

[4] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 10期

关键词：

ROOM-TEMPERATURE; MAGNETORESISTANCE; ANISOTROPY;

D O I：

10.7567/1882-0786/ab3e2d

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Element substitution effects on the crystal structure and magnetic properties are investigated by substituting Cr atoms for a part of Mn-sites in the Cu2Sb-type MnAI\lGe. Perpendicularly magnetized (001)-textured films were successfully fabricated onto thermally oxidized silicon substrates without underlayers for the Cr-concentration ranging from 0 to 0.45 in the stoichiometry. The uniaxial magnetic anisotropy energy, K-u is enhanced by Cr-substitution, and the maximum value is 7.3 x 10 ( )erg cm(-3) at room temperature. The enhancement of K-u can be explained by the change of electronic structure due to Cr-substitution, based on the second order perturbation theory with spin-orbit interaction. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

共 25 条

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