Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots

被引：9

作者：

Wang, HL ^{[1
]}

Yang, FH

Feng, SL

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Qufu Normal Univ, Dept Phys, Qufu 273165, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 212卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

dopant; InAs/GaAs; self-organized quantum dots; MBE; PL;

D O I：

10.1016/S0022-0248(00)00029-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the photoluminescence in directly Si- and Be-doped self-organized InAs/GaAs quantum dots (QDs). When the doping level is low, a decrease in linewidth is observed. However, it will decrease the uniformity and photoluminescence peak intensity of QDs when the doping level is high. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：35 / 38

页数：4

共 15 条

[11] SUBSTRATE-TEMPERATURE AND MONOLAYER COVERAGE EFFECTS ON EPITAXIAL ORDERING OF INAS AND INGAAS ISLANDS ON GAAS [J].