All-Optical Hybrid VO2/Si Waveguide Absorption Switch at Telecommunication Wavelengths

被引:12
|
作者
Parra, Jorge [1 ]
Ivanova, Todora [1 ]
Menghini, Mariela [2 ,3 ]
Homm, Pia [4 ]
Locquet, Jean-Pierre [4 ]
Sanchis, Pablo [1 ]
机构
[1] Univ Politecn Valencia, Nanophoton Technol Ctr, Valencia 46022, Spain
[2] Katholieke Univ Leuven, Dept Phys & Anstron, B-3001 Leuven, Belgium
[3] IMDEA Nanociencia, E-28049 Madrid, Spain
[4] Dept Phys & Anstron, B-3001 Leuven, Belgium
关键词
Optical switching; photonic integration; silicon photonics; vanadium dioxide; METAL-INSULATOR-TRANSITION; THIN-FILMS; PLASMONIC MODULATOR; PHASE-TRANSITION; BROAD-BAND; SEMICONDUCTOR; DESIGN; DRIVEN;
D O I
10.1109/JLT.2021.3054942
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Vanadium dioxide (VO2) is one of the most promising materials for developing hybrid photonic integrated circuits (PICs). At telecommunication wavelengths, VO2 exhibits a large change on the refractive index (Delta n similar to 1 and Delta kappa similar to 2.5) between its insulating and metallic state. Such insulating-to-metal transition (IMT) can be triggered by light, which could enable all-optical hybrid VO2-waveguide devices. Here, we experimentally demonstrate an all-optical absorption switch using a hybrid VO2/Si waveguide fully compatible with the silicon photonics platform. All-optical characterization was carried out for TE polarization and at telecommunication wavelengths using an in-plane approach. The temporal dynamics were retrieved by means of pump-probe measurements. Our results show an extinction ratio of 0.7 dB/mu m with a maximum switchable length of 15 mu m, a switching speed as low as 318 ns, and an energy per switch of 15.8 nJ. The inherit large optical bandwith of a non-resonant waveguide poses this device as a promising candidate for developing all-optical and broadband silicon PICs.
引用
收藏
页码:2888 / 2894
页数:7
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