Determination of the Parameters that Control Oxidation Using Optical Interference, Applied to the Two Phase Oxide Scale on Copper

被引:2
作者
Gil, Y. [1 ]
Riess, I. [1 ]
机构
[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
来源
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS | 2009年 / 223卷 / 10-11期
基金
以色列科学基金会;
关键词
Tarnishing; Oxidation; Optical Interference; Copper Oxide; CUPROUS-OXIDE; THIN-FILMS; POINT-DEFECTS; SPACE-CHARGE; TEMPERATURES; PARAMELACONITE; DIFFUSION; KINETICS;
D O I
10.1524/zpch.2009.6080
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The oxidation of a metal forming a transparent oxide allows it to be followed in situ by optical interference. The layer thickness is determined from the interference pattern. The method can be applied to any tarnishing process as long as the resulting layer stays transparent. Oxidation of copper is followed in air, at T = 230 degrees C, making use of the three colors of a video camera. In this case a two phase, Cu2O/CuO scale is formed on Cu. An analysis of the rate of formation of two layers of two phases is presented. The rate constants are related to a surface reaction rate or to bulk diffusion and conductivity. It is shown that while the total amount of oxide increases with time the layer thickness of one of the phases can temporarily decrease. In the long time limit both layers follow the parabolic law i.e. increase as root time. The method can be applied also to the inverse process of reduction and decrease in the scale thickness.
引用
收藏
页码:1285 / 1309
页数:25
相关论文
共 35 条
[21]   Chemically deposited copper oxide thin films: structural, optical and electrical characteristics [J].
Nair, MTS ;
Guerrero, L ;
Arenas, OL ;
Nair, PK .
APPLIED SURFACE SCIENCE, 1999, 150 (1-4) :143-151
[22]   DEFECT CHEMISTRY OF CU2-YO AT ELEVATED-TEMPERATURES .2. ELECTRICAL-CONDUCTIVITY, THERMOELECTRIC-POWER AND CHARGED POINT-DEFECTS [J].
PORAT, O ;
RIESS, I .
SOLID STATE IONICS, 1995, 81 (1-2) :29-41
[23]   ELECTRODEPOSITION AND CHARACTERIZATION OF CUPROUS-OXIDE [J].
RAKHSHANI, AE ;
ALJASSAR, AA ;
VARGHESE, J .
THIN SOLID FILMS, 1987, 148 (02) :191-201
[24]   LOW TEMPERATURE OXIDATION OF COPPER .2. REACTION RATE ANISOTROPY [J].
RHODIN, TN .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (07) :3143-3146
[25]  
RICKERT H, 1982, ELECTROCHEMISTRY SOL, P157
[26]   CONDITIONS FOR NEGLECTING SPACE-CHARGE EFFECTS ON DISTRIBUTIONS OF POINT-DEFECTS AND IV RELATIONS [J].
RIESS, I .
SOLID STATE IONICS, 1994, 69 (01) :43-52
[27]  
Riess I., 1997, CRC HDB SOLID STATE, P223
[29]   Preparation of oxide thin films by controlled diffusion of oxygen atoms [J].
Rosenstock, Z ;
Riess, I .
SOLID STATE IONICS, 2000, 136 :921-926
[30]   Electronic properties of thin cuprous oxide sheet prepared by infrared light irradiation [J].
Suehiro, T ;
Sasaki, T ;
Hiratate, Y .
THIN SOLID FILMS, 2001, 383 (1-2) :318-320